Микросхемы и комплектующие AS7C3256A-10JIN

SRAM , 256 Кбит, 32К x 8бит, 3В до 3.6В, SOJ, 28 вывод(-ов), 10 нс

The AS7C3256A-10JIN is a 3.3V 32k x 8-bit high-performance CMOS Static Random Access Memory (SRAM) organized as 32768 words x 8-bit. It is designed for memory applications requiring fast data access at low voltage, including Pentium™, PowerPC™ and portable computing. Alliances advanced circuit design and process techniques permit 3.3V operation without sacrificing performance or operating margins. The device enters standby mode when CE is high. CMOS standby mode consumes 7.2mW. Normal operation offers 75% power reduction after initial access, resulting in significant power savings during CPU idle, suspend and stretch mode. A write cycle is accomplished by asserting chip enable and write enable LOW. The data on the input pins I/O0-I/O7 is written on the rising edge of WE or CE. To avoid bus contention, external devices should drive I/O pins only after outputs have been disabled with output enable or write enable.

• Pin compatible with AS7C3256
• Low power consumption - ACTIVE - 180mW/maximum at 10ns
• Low power consumption - STANDBY - 180mW/maximum CMOS I/O
• Easy memory expansion with CE and OE inputs
• TTL-compatible, 3-state I/O
• Latch-up current >=200mA

Области применения

Компьютеры и Периферия, Промышленное