Микросхемы и комплектующие AS6C8008-55ZIN

SRAM , 8 Мбит, 1М x 8бит, 2.7В до 5.5В, TSOP, 44 вывод(-ов), 55 нс

The AS6C8008-55ZIN is a 1024k x 8-bit low power CMOS Static Random Access Memory (SRAM) organized as 1048576 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The AS6C8008 is well designed for very low power system applications and particularly well suited for battery back-up nonvolatile memory application. The AS6C8008 operates from a single power supply of 2.7 to 5.5V and all inputs and outputs are fully TTL compatible.

• Access time - 55ns
• Low power consumption
• Fully static operation
• Tri-state output
• Data retention voltage - 1.5V

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