Микросхемы и комплектующие AS6C1008-55TIN

SRAM , 1 Мбит, 128К x 8бит, 2.7В до 5.5В, TSOP, 32 вывод(-ов), 55 нс

The AS6C1008-55TIN is a 128k x 8-bit low power CMOS Static Random Access Memory (SRAM) organized as 131072 words by 8-bit. It is fabricated using very high performance, high reliability CMO S technology. Its standby current is stable within the range of operating temperature. The AS6C1008 is well designed for very low power system applications and particularly well suited for battery back-up non-volatile memory application The AS6C1008 operates from a single power supply of 2.7 to 5.5V.

• Access time - 55ns
• Low power consumption
• Fully compatible with all competitors 3.3/5V
• Fully static operation
• Tri-state output
• Data retention voltage - 1.5V

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