Микросхемы и комплектующие 1EDS5663HXUMA1

MOSFET Driver , High Side, 3V to 3.5V Supply, 8A Out, 37ns Delay, SOIC-16

CoolGaN™ and similar GaN switches require a continuous gate current of a few mA in their "on" state. Besides, due to low threshold voltage and extremely fast switching transients, a negative "off" voltage level may be needed. Infineon's GaN EiceDRIVER™ solves these issues with very low effort. The two output stages shown below enable a zero "off" level to eliminate any duty-cycle dependence. In addition, the differential topology is able to provide negative gate drive without the need for a negative supply voltage. However, it requires a floating supply voltage not compatible with bootstrapping.

• Dedicated gate driver ICs for Infineon's high voltage GaN power switches (CoolGaN™, X-GaN™)
• Single output supply voltage (typ. 8 V, floating)
• Switching behavior independent of duty-cycle (2"off" voltage levels)
• Differential concept to ensure negative gate drive voltage under any condition
• Fast input-to-output propagation (37 ns) with excellent stability (+7
• -6ns)
• Galvanic input-to-output isolation based on coreless transformer (CT) technology
• Common mode transient immunity (CMTI) > 200 V
• ns

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