Интерфейсы USB TUSB2036VF

USB интерфейс , Контроллер USB Концентратора, USB 2.0, 3 В, 3.6 В, LQFP, 32 вывод(-ов)

The TUSB2036VF is a 3-port Hub that provides up to three downstream ports in compliance with the USB 2.0 specification. Because this device is implemented with a digital state machine instead of a microcontroller, no firmware programming is required. Fully-compliant USB transceivers are integrated into the ASIC for all upstream and downstream ports. The downstream ports support both full-speed and low-speed devices by automatically setting the slew rate according to the speed of the device attached to the ports. The configuration of the BUSPWR pin selects either the bus-powered or the self-powered mode. The introduction of the DP0 pull-up resistor disable pin, DP0PUR, makes it much easier to implement an onboard bus/self-power dynamic-switching circuitry. With the new function pin, the end-equipment vendor can reduce the total board cost while adding additional product value. The TUSB2036 supports both bus-powered and self-powered modes.

• Integrated USB transceivers
• 3.3V Low power ASIC logic
• One upstream port and 3 programmable downstream ports
• Two power source modes (self-powered mode, bus-powered mode)
• All downstream ports support full-speed and low-speed operations
• Power switching and over-current reporting is provided ganged or per port
• Supports suspend and resume operations
• Suspend status pin available for external logic power down
• 3-state EEPROM interface allows EEPROM sharing
• Push-pull outputs for PWRON eliminate the need for external pull-up resistors

• Noise filtering on OVRCUR provides immunity to voltage spikes
• Supports 6MHz operation through a crystal input or a 48MHz input clock
• No special driver requirements
• Green product and no Sb/Br

Области применения

Компьютеры и Периферия, Потребительская Электроника This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.