IGBT транзистор - [TO-3P]; Примечание: IGBT; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:2.6V; Power Dissipation Pd:195W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3P; ;RoHS Compliant: Yes