IGBT транзисторы NGTB30N120IHLWG

БТИЗ транзистор , 60 А, 1.75 В, 260 Вт, 1.2 кВ, TO-247, 3 вывод(-ов)

The NGTB30N120IHLWG is an Insulated Gate Bipolar Transistor (IGBT) features a robust and field-stop (FS) Trench construction, provides superior performance in demanding switching applications, offering both low ON-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free-wheeling diode with a low forward voltage.

• Low saturation voltage using Trench with field-stop technology
• Low switching loss - Reduces system power dissipation
• Optimized for low case temperature in IH cooker application
• Low gate charge
• Low conduction loss

Области применения

ОВКВ, Потребительская Электроника, Управление Питанием