IGBT транзисторы NGTB25N120LWG

БТИЗ транзистор , 50 А, 1.85 В, 192 Вт, 1.2 кВ, TO-247, 3 вывод(-ов)

The NGTB25N120LWG is an Insulated Gate Bipolar Transistor (IGBT) features a robust and field-stop (FS) Trench construction, provides superior performance in demanding switching applications. Offering both low ON-state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free-wheeling diode with a low forward voltage.

• Low saturation voltage using Trench with field-stop technology
• Low switching loss - Reduces system power dissipation
• Low gate charge
• Low conduction loss
• 5µs Short-circuit capability

Области применения

Управление Питанием, Потребительская Электроника, Промышленное, Привод Двигателя и Управление