IGBT транзисторы NGTB25N120IHLWG

БТИЗ транзистор , 50 А, 1.85 В, 192 Вт, 1.2 кВ, TO-247, 3 вывод(-ов)

The NGTB25N120IHLWG is a 1200V (Insulated Gate Bipolar Transistor) IGBT features a robust and cost effective Field Stop (FS) trench construction. It provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged freewheeling diode with a low forward voltage.

• Low saturation voltage using trench with field-stop technology
• Low switching loss reduces system power dissipation
• Optimized for low case temperature in IH cooker application
• Low gate charge
• Low conduction loss
• ±20V Gate to emitter voltage
• 0.65°C/W IGBT thermal resistance, junction to case
• 2°C/W Diode thermal resistance, junction to case
• 40°C/W Thermal resistance, junction to ambient

Области применения

ОВКВ, Потребительская Электроника, Промышленное