IGBT транзисторы NGTB15N60S1EG

БТИЗ транзистор , 30 А, 1.5 В, 117 Вт, 600 В, TO-220, 3 вывод(-ов)

The NGTB15N60S1EG is an Insulated Gate Bipolar Transistor features a robust and non-punch through (NPT) Trench construction, provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for hard switching applications. Incorporated into the device is a rugged co-packaged reverse recovery diode with a low forward voltage.

• Low saturation voltage resulting in low conduction loss
• Low switching loss in higher frequency applications
• Soft fast reverse recovery diode
• Excellent current versus package size performance density
• 5µs Short-circuit capability

Области применения

Привод Двигателя и Управление, Управление Питанием, Потребительская Электроника