IGBT транзисторы NGTB15N120IHLWG

БТИЗ транзистор , 30 А, 1.8 В, 156 Вт, 1.2 кВ, TO-247, 3 вывод(-ов)

The NGTB15N120IHLWG is an Insulated Gate Bipolar Transistor features a robust and field-stop (FS) Trench construction, provides superior performance in demanding switching applications, offering both low ON-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free-wheeling diode with a low forward voltage.

• Low saturation voltage using Trench with field-stop technology
• Low switching loss - Reduces system power dissipation
• Optimized for low case temperature in IH cooker application
• Low gate charge
• Low conduction loss
• Reduces system power dissipation

Области применения

ОВКВ, Потребительская Электроника, Управление Питанием