IGBT транзисторы IRG4PH40KPBF

БТИЗ транзистор , 30 А, 2.74 В, 160 Вт, 1.2 кВ, TO-247AC, 3 вывод(-ов)

The IRG4PH40KPBF is a 1200V short-circuit rated Discrete (Insulated Gate Bipolar Transistor) IGBT provides tighter parameter distribution and higher efficiency than previous generations. It combines low induction losses with high switching speed. As a freewheeling diode, HEXFRED™ ultrafast, ultrasoft recovery diodes are recommended for minimum EMI/noise and switching losses in the diode and IGBT.

• High short circuit rating optimized for motor control (tsc=10µs, VCC=720V, TJ=125°C, VGE=15V)
• Latest generation 4 IGBT's offer highest power density motor controls possible
• Planar IGBT technology
• Ultrafast 8 to 30kHz switching speed
• ±20V Gate to emitter voltage
• 10µs Short-circuit withstand time
• 0.77°C
• W IGBT thermal resistance, junction to case

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Управление Питанием, Считывание и Контрольно-измерительная Аппаратура, Промышленное