IGBT транзисторы IRG4BC30FDPBF

БТИЗ транзистор , 31 А, 1.9 В, 100 Вт, 600 В, TO-220AB, 3 вывод(-ов)

The IRG4BC30FDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for medium operating frequencies 1 to 5kHz in hard switching, >20kHz in resonant mode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3. The IGBT co-packaged with HEXFRED® ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. The HEXFRED® diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing.

• Optimized for specific application conditions
• Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs

Области применения

ОВКВ, Потребительская Электроника, Управление Питанием Market demand for this product has caused an extension in lead times, delivery dates may fluctuate