IGBT транзисторы IRG4BC20KDPBF

БТИЗ транзистор , 16 А, 2.27 В, 60 Вт, 600 В, TO-220AB, 3 вывод(-ов)

The IRG4BC20KDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for high operating frequency of >5kHz and short-circuit rated to 10µs at 125°C, VGE = 15V. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation. The IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. The HEXFRED™ diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses.

• Latest generation 4 IGBTs offer highest power density motor controls possible
• 32A Pulsed collector current
• 10µs Short-circuit withstand time

Области применения

Потребительская Электроника, ОВКВ, Освещение, Альтернативаня Энергия, Управление Питанием Market demand for this product has caused an extension in lead times, delivery dates may fluctuate