IGBT транзисторы HGTG40N60B3

БТИЗ транзистор , 70 А, 2 В, 290 Вт, 600 В, TO-247, 3 вывод(-ов)

The HGTG40N60B3 is a N-channel PT IGBT ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as drivers for solenoids, relays and contactors. The UFS series MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor. The much lower ON-state voltage drop varies only moderately between 25 and 150°C.

• Short-circuit rating
• 100ns Fall time @ TJ = 150°C
• 290W Total power dissipation @ TC = 25°C

Области применения

Управление Питанием, Привод Двигателя и Управление