IGBT транзисторы HGTG20N60B3..

БТИЗ транзистор , 40 А, 2 В, 165 Вт, 600 В, TO-247, 3 вывод(-ов)

The HGTG20N60B3 is a N-channel IGBT ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as drivers for solenoids, relays and contactors. The generation III UFS series MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor. The much lower ON-state voltage drop varies only moderately between 25 and 150°C.

• Short-circuit rating
• 140ns at 150°C Typical fall time
• 165W Total power dissipation @ TC = 25°C

Области применения

Управление Питанием, Привод Двигателя и Управление