Флэш-память S29JL064J55TFI000

Флеш память , Параллельная NOR, 64 Мбит, 8М x 8бит / 4М x 16бит, CFI, Параллельный, TSOP

The S29JL064J55TFI000 is a 64MB CMOS simultaneous Read/Write Flash Memory organized as 4194304 words of 16-bit each or 8388608 bytes of 8-bit each. Word mode data appears on DQ15-DQ0, byte mode data appears on DQ7-DQ0. The device is designed to be programmed in-system with the standard 3VCC supply and can also be programmed in standard EPROM programmers. The device is available with an access time of 55ns. Standard control pins - chip enable (CE#), write enable (WE#) and output enable (OE#) - control normal read and write operations and avoid bus contention issues. The device requires only a single 3V power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations.

• Standard configuration
• Data can be continuously read from one bank while executing erase
• program functions in another bank
• Zero latency between read and write operations
• Flexible bank architecture
• Read may occur in any of the three banks not being programmed or erased
• Four banks may be grouped by customer to achieve desired bank divisions
• Top and bottom boot sectors in the same device
• Any combination of sectors can be erased
• Manufactured on 0.11µm process technology

• Secured silicon region - Extra 256-byte sector
• Sophisticated power management circuits reduce power consumed during inactive periods to nearly zero
• Compatible with JEDEC standards
• Pinout and software compatible with single-power-supply flash standard
• High performance
• Program time - 7µs
• word typical using accelerated programming function
• Ultralow power consumption
• Cycling endurance - 1million cycles per sector typical
• Data retention - 20 years typical
• Supports common flash memory interface
• Erase suspend
• erase resume

Области применения

Компьютеры и Периферия, Промышленное, Связь и Сеть, Потребительская Электроника