Флэш-память S29AL016J70TFI010..

Флеш память , Параллельная NOR, 16 Мбит, 2М x 8бит / 1М x 16бит, CFI, TSOP, 48 вывод(-ов)

The S29AL016J70TFI010 is a 16MB CMOS Flash Memory organized as 2097152 bytes or 1048576 words. The word-wide data appears on DQ15-DQ0, the byte-wide data appears on DQ7-DQ0. This device is designed to be programmed in-system with the standard system 3VCC supply. The device can also be programmed in standard EPROM programmers. The device offers access time of 70ns allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable, write enable and output enable controls. The device requires only a single 3V power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. The S29AL016J is entirely command set compatible with the JEDEC single-power-supply flash standard. Register contents serve as input to an internal state-machine that controls the erase and programming circuitry.

• Top boot sector device
• Manufactured on 110nm process technology - Fully compatible with 200nm S29AL016D
• Secured silicon sector region
• Flexible sector architecture
• Hardware method of locking a sector to prevent any program or erase operations within that sector
• Reduces overall programming time when issuing multiple program command sequences
• Pinout and software compatible with single-power supply flash
• Superior inadvertent write protection
• High performance
• Ultralow power consumption

• Cycling endurance - 1000000 cycles per sector typical
• Data retention - 20 years typical
• Erase suspend
• erase resume
• Data# polling and toggle bits
• Provides a hardware method of detecting program or erase cycle completion
• Hardware method to reset the device to reading array data
• Provides a software method of detecting program or erase operation completion

Области применения

Компьютеры и Периферия, Промышленное, Связь и Сеть, Потребительская Электроника