Флэш-память S25FL256LAGBHV030

Флеш память , Последовательная NOR, 256 Мбит, 32М x 8бит, SPI, BGA, 24 вывод(-ов)

The S25FL256LAGBHV030 from Cypress Semiconductor is a 256Mbit (32MB), 3V FL-L flash memory in 24 pin 4 x 6 ball BGA package. It is a flash non-volatile memory product using 65nm floating gate process technology. Traditional SPI single bit serial I/P and O/P is supported as well as optional two bit (dual I/O or DIO), four bit wide quad I/O(QIO) and quad peripheral interface(QPI) commands. DDR read commands for QIO and QPI that transfer address and read data on both edges of clock. The architecture features a page programming buffer that allows up to 256bytes to be programmed in one operation and provides individual 4KB sector, 32KB half block, 64KB block or entire chip erase. It offers high densities coupled with flexibility and fast performance required by a variety of mobile or embedded applications. Provides an ideal storage solution for systems with limited space, signal connections and power. Ideal for code shadowing to RAM, executing code directly and storing re-programmable data.

• Burst wrap, continuous, QPI modes, serial peripheral interface (SPI) with multi-I
• O
• X1
• X2
• X4 bus width, 133MHz speed, 2.7V to 3.6V single supply voltage with CMOS I
• O
• 100,000 minimum program
• erase cycles, 20 year minimum data retention
• 6MB
• s (50MHz) normal read speed, 16.5MB

• s (133MHz) fast read speed
• Legacy block protection (block range), individual and region protection
• Normal, fast, dual I
• O, quad I
• O, dualO, quadO, DDR quad I
• O commands
• Extended addressing (24 or 32bit address options)
• Serial flash discoverable parameters (SFDP) for configuration information
• Program suspend and resume, erase suspend
• resume, 1024B security region
• OTP
• Status and configuration register protection, temperature range from -40°C to +105°C

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