Энергонезависимая память SST39VF010-70-4I-NHE

Флеш память , NOR, Параллельная NOR, 1 Мбит, 128К x 8бит, LCC, 32 вывод(-ов)

The SST39VF010-70-4I-NHE is a 1MB CMOS multi-purpose Flash Memory manufactured with SSTs proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The devices conform to JEDEC standard pinouts for x8 memories. Featuring high performance byte-program, the device provides a maximum byte-program time of 20µsec. This device uses toggle bit or data# polling to indicate the completion of program operation. To protect against inadvertent write, it has on-chip hardware and software data protection schemes. Designed, manufactured and tested for a wide spectrum of applications, it is offered with a guaranteed typical endurance of 100000 cycles. Data retention is rated at greater than 100 years. The device is suited for applications that require convenient and economical updating of program, configuration or data memory.

• Superior reliability
• Low power consumption
• Sector-erase capability - uniform 4 Kbyte sectors
• Fast read access time - 70ns
• Latched address and data
• Fast erase and byte-program
• Automatic write timing - internal VPP generation
• End-of-write detection
• CMOS I
• O compatibility

Области применения

Компьютеры и Периферия, Промышленное, Связь и Сеть, Потребительская Электроника