Энергонезависимая память S29GL512P11TFI010..

Флеш память , NOR, Параллельная NOR, 512 Мбит, 64М x 8бит / 32М x 16бит, Параллельный, TSOP

The S29GL512P11TFI010 is a Mirrorbit® Flash Memory Device fabricated on 90nm process technology. This device offers a fast page access time of 25ns with a corresponding random access time as fast as 90ns. It features a write buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today's embedded applications that require higher density, better performance and lower power consumption.

• Single 3V read
• program
• erase
• Enhanced Versatile I
• O™ control
• Suspend and resume commands for program and erase operations
• Write operation status bits indicate program and erase operation completion
• Unlock bypass program command to reduce programming time
• Support for CFI (common flash interface)
• Persistent and password methods of advanced sector protection

• Hardware reset input (RESET#) resets device
• 90nm MirrorBit process technology
• 8-word
• 16-byte Page read buffer
• 32-word
• 64-byte Write buffer reduces overall programming time for multiple-word updates
• Secured silicon sector region
• 100000 Erase cycles per sector typical
• 20-year Data retention typical

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