Энергонезависимая память S29GL512P11FFI020

Флеш память , Параллельная NOR, 512 Мбит, 32М x 16бит, Параллельный, BGA, 64 вывод(-ов)

The S29GL512P11FFI020 is a 512Mbit 3V, page flash with 90nm MirrorBit process technology in 64 fortified pin BGA package. This device offers a fast page access time of 25ns with a corresponding random access time as fast as 100ns at regulated VCC. It features a write buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. It makes device ideal for today's embedded applications that require higher density, better performance and lower power consumption. It has an uniform 64Kword/128Kbyte sector architecture with five hundred twelve sectors, hardware reset input (RESET#) resets device and ready/busy# output (RY/BY#) detects program or erase cycle completion.

• VIO = VCC = 2.7V to 3.6V, lowest address sector protected
• 8-word
• 16-byte page read buffer
• 100000 erase cycles per sector typical and 20year data retention typical
• Write operation status bits indicate program and erase operation completion
• Unlock bypass program command to reduce programming time
• Support for CFI (Common Flash Interface)
• Persistent and password methods of advanced sector protection
• Suspend and resume commands for program and erase operations
• Industrial temperature range from -40°C to +85°C

• WP#
• ACC input, protects first or last sector regardless of sector protection settings

Области применения

Встроенные Конструкции и Разработка Market demand for this product has caused an extension in lead times, delivery dates may fluctuate