Энергонезависимая память S29GL256P11TFI010

Флеш память , NOR, Параллельная NOR, 256 Мбит, 32М x 8бит / 16М x 16бит, Параллельный, TSOP

The S29GL256P11TFI010 is a 256MB page mode Flash Memory fabricated on 90nm MirrorBit® Process technology. This device offers a fast page access time of 110ns with a corresponding random access time as fast as 90ns. It features a write buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device ideal for todays eMBedded applications that require higher density, better performance and lower power consumption.

• Highest address sector protected
• Versatile I
• O™ control
• Secured silicon sector region - Can be programmed and locked at the factory or by the customer
• 100000 Erase cycles per sector typical
• 20 Years data retention typical
• Suspend and resume commands for program and erase operations
• Write operation status bits indicate program and erase operation completion
• Unlock bypass program command - Reduces programming time
• Support for CFI

• Persistent and password methods of advanced sector protection
• WP#
• ACC input - Protects first or last sector regardless of sector protection settings
• Accelerates programming time for greater throughput during system production
• Hardware reset input resets device
• Ready
• busy# output detects program or erase cycle completion

Области применения

Компьютеры и Периферия, Промышленное, Связь и Сеть, Потребительская Электроника