Энергонезависимая память M45PE20-VMN6P.

Флеш память , низковольтная, возможность стирания страницы, чередование байтов, Последовательная NOR

The M45PE20-VMN6P is a 2MB low voltage page-erasable serial Flash Memory with byte-alterability and a 33MHz SPI bus interface. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated page erase cycle followed by a page program cycle. The memory is organized as 4 sectors, each containing 256 pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as consisting of 1024 pages or 262144 bytes. The memory can be erased a page at a time, using the page erase instruction or a sector at a time, using the sector erase instruction.

• Page write in 11ms typical
• Page program in 1.2ms typical
• Page erase in 10ms typical
• 33MHz Clock rate maximum
• Deep power-down mode 1µA typical
• Electronic signature - JEDEC standard 2-byte signature
• More than 100000 write cycles
• More than 20 years data retention

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Компьютеры и Периферия, Промышленное, Связь и Сеть, Потребительская Электроника