Энергонезависимая память M29DW323DT70N6E.

Флеш память , блок загрузки, Параллельная NOR, 32 Мбит, 4М x 8бит / 2М x 16бит, CFI, Параллельный

The M29DW323DT70N6E is a 32MB non-volatile Flash Memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage 2.7 to 3.6V supply. The M29DW323DT locates the parameter blocks at the top of the memory address space. The extended block, that can be accessed using a dedicated command. The extended block can be protected and so is useful for storing security information. However the protection is irreversible, once protected the protection cannot be undone. Each block can be erased independently so it is possible to preserve valid data while old data is erased. The blocks can be protected to prevent accidental program or erase commands from modifying the memory. Program and Erase commands are written to the command Interface of the memory. An on-chip program/erase controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents.

• Asymmetrical block architecture
• On power-up the memory defaults to its read mode
• Access time - 70ns
• Double word/quadruple byte program
• Dual operations - read in one bank while program or erase in other
• Erase suspend and resume modes - read and program another block during erase suspend
• Unlock bypass program command - Faster production/batch programming
• VPP/WP Pin for fast program and write protect
• Temporary block unprotection mode
• Common flash interface - 64-bit security code

• Extended memory block - extra block used as security block or to store additional information
• Low power consumption - standby and automatic standby
• 100000 Program/erase cycles per block
• Electronic signature

Области применения

Компьютеры и Периферия, Промышленное, Связь и Сеть, Потребительская Электроника