Энергонезависимая память M28W320FCB70N6E.

Флеш память , блок загрузки, Параллельная NOR, 32 Мбит, 2М x 16бит, CFI, Параллельный, TSOP

The M28W320FCB70N6E is a 32MB non-volatile Flash Memory that can be erased electrically at the block level and programmed in-system on a word-by-word basis. These operations can be performed using a single low voltage 2.7 to 3.6V supply. VDDQ allows to drive the I/O pin down to 1.65V. An optional 12V VPP power supply is provided to speed up customer programming. The device features an asymmetrical blocked architecture. It has an array of 71 blocks - 8 parameter blocks of 4K word and 63 main blocks of 32K word. M28W320FCT has the parameter blocks at the top of the memory address space while the M28W320FCB locates the parameter blocks starting from the bottom. It features an instant, individual block locking scheme that allows any block to be locked or unlocked with no latency, enabling instant code and data protection. All blocks have three levels of protection. It can be locked and locked-down individually preventing any accidental programming or erasure.

• Access time - 70ns
• Programming time - 10µs typical
• Common flash interface
• Block locking - all blocks locked at power-up
• Any combination of blocks can be locked
• WP for block lock-down
• Automatic stand-by mode
• Program and erase suspend
• 100000 Program/erase cycles per block

Области применения

Компьютеры и Периферия, Промышленное, Связь и Сеть, Потребительская Электроника