Энергонезависимая память M25P32-VME6G.

Флеш память , NOR, Последовательная NOR, 32 Мбит, 4М x 8бит, Последовательный, SPI, VDFPN

The M25P32-VME6G is a 32MB (4Mb x 8bit) NOR serial flash embedded memory device in 8 pin VFDFPN package. This device has advanced write protection mechanisms which is accessed by high speed SPI compatible bus. It supports high performance commands for clock frequency up to 75MHz. The memory can be programmed from 1byte to 256byte at a time using PAGE PROGRAM command. It is organized as 64 sectors, each containing 256 pages and each page is 256bytes wide. Memory can be viewed either as 16384 pages or as 4194304byte. The entire memory can be erased using BULK ERASE command or it can be erased one sector at a time using the SECTOR ERASE command.

• Operating voltage range from 2.7V to 3.6V
• Page program (up to 256bytes) in 0.64ms
• Sector erase of 512KB in 0.6s
• Bulk erase in 23s and 17s with VPP = 9V
• Hardware write protection
• Deep power down of 1µA
• Electronic signature
• More than 100000 write cycles per sector
• More than 20 years of data retention
• Ambient operating temperature range from -40°C to 85°C

Области применения

Встроенные Конструкции и Разработка