Энергонезависимая память FM24W256-G

NVRAM , FRAM, 256 Кбит, 32К x 8бит, I2C, SOIC

The FM24W256-G is a 256Kbit (32K × 8bit) I2C FRAM (Ferroelectric Random Access Memory) device in 8 pin SOIC package. This non volatile memory reads and writes similar to RAM. It provides reliable data retention for 151 years while eliminating complexities, overhead and system level reliability problems caused by EEPROM and other non volatile memories. Unlike EEPROM, the FM24W256 performs write operations at bus speed. No write delays are incurred. Data is written to memory array immediately after each byte is successfully transferred to device. The next bus cycle can commence without the need for data polling. In addition, the device offers substantial write endurance compared with other non volatile memories. The FM24W256 provides substantial benefits to users of serial (I2C) EEPROM as a hardware drop-in replacement.

• High endurance 100 trillion (10^14) read
• writes
• Advanced high reliability ferroelectric process
• Up to 1MHz frequency
• Supports legacy timings for 100KHz and 400KHz
• Low power consumption
• Active current of 100µA at 100KHz
• Typical standby current of 15µA
• Wide operating voltage from 2.7V to 5.5V
• Operating temperature range from -40°C to 85°C

Области применения

Встроенные Конструкции и Разработка