Энергонезависимая память FM24C64B-G

NVRAM , FRAM, 64 Кбит, 8К x 8бит, I2C, SOIC

The FM24C64B-G is a 64Kbit (8K × 8) serial I2C FRAM (Ferroelectric Random Access Memory) in 8pin SOIC package. This nonvolatile memory employs an advanced ferroelectric process and performs reads/writes similar to RAM. It provides reliable data retention for 151 years while eliminating complexities, overhead and system level reliability problems caused by EEPROM and other nonvolatile memories. Unlike EEPROM, the FM24C64B performs write operations at bus speed and no write delays are incurred. Data is written to memory array immediately after each byte is successfully transferred to device. The next bus cycle can commence without need for data polling. FRAM exhibits much lower power during write operation than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits. The FM24C64B provides substantial benefits to users of serial (I2C) EEPROM as a hardware drop in replacement.

• Automotive grade AEC-Q100 qualified
• Advanced high reliability ferroelectric process
• High endurance of 100 trillion read
• writes
• Up to 1MHz frequency
• Supports legacy timings for 100KHz and 400KHz
• Low power consumption
• Active current of 100µA at 100KHz
• 4µA standby current
• Operating supply voltage (VDD) range from 4.5V to 5.5V

• Operating temperature range from -40°C to 85°C

Области применения

Встроенные Конструкции и Разработка, Авто