Энергонезависимая память AT28C64B-15PU

EEPROM , 64 Кбит, 8К x 8бит, Parallel, 5 МГц, DIP, 28 вывод(-ов)

The AT28C64B-15PU is a high performance 64K (8K x 8bit) parallel EEPROM device in 28 pin DIP. Its 64K of memory is organized as 8192words by 8bits. This EEPROM is manufactured with advanced non volatile CMOS technology, the device offers access times to 150ns with power dissipation of 220mW. When device is deselected, the CMOS standby current is less than 100µA. The AT28C64B-15PU is accessed like static RAM for read or write cycle without the need for external components. The device contains 64byte page register to allow writing of up to 64bytes simultaneously. It utilizes internal error correction for extended endurance and improved data retention characteristics. The AT28C64B-15PU also includes an extra 64bytes of EEPROM for device identification or tracking.

• CMOS and TTL compatible inputs and outputs
• 40mA active current
• Automatic page write operation
• Single 5V supply
• Hardware and software data protection
• JEDEC approved byte wide pin-out
• Maximum page write cycle time of 10ms (standard)
• High reliability CMOS technology
• Page write operation from 1byte to 64byte
• Operating temperature range from -40°C to 85°C

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Встроенные Конструкции и Разработка