Энергонезависимая память 93LC46/SN

EEPROM , Microwire, 1 Кбит, 128 x 8бит / 64 x 16бит, Serial Microwire, 2 МГц, SOIC, 8 вывод(-ов)

The 93LC46/SN is a 1kB MICROWIRE compatible serial Electrically Erasable Programmable Read-Only Memory (EEPROM) configured as x8 or x16-bit depending on the external logic of levels of the ORG pin. Advanced CMOS technology makes this device ideal for low power nonvolatile memory applications. Instructions, addresses and write data are clocked into the DI pin on the rising edge of the clock (CLK). The DO pin is normally held in a high-Z state except when reading data from the device or when checking the ready/busy status during a programming operation. The ready/busy status can be verified during an erase/write operation by polling the DO pin, DO low indicates that programming is still in progress, while DO high indicates the device is ready. The DO will enter the high-Z state on the falling edge of the CS. After power-up, the device is automatically in the EWDS mode. Therefore, an EWEN instruction must be performed before any ERASE or WRITE instruction can be executed.

• Single supply with programming operation down to 2.5V
• Low-power CMOS technology
• 100µA Typical active read current at 2.5V
• 3µA Typical standby current at 2.5V
• Self-timed erase and write cycles
• Automatic ERAL before WRAL
• Power ON
• OFF data protection circuitry
• Industry standard 3-wire serial I
• O

• Device status signal during erase
• write cycles
• Sequential read function
• 1000000 Erase
• write cycles ensured
• Data retention >200 years

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Компьютеры и Периферия, Промышленное, Связь и Сеть, Потребительская Электроника