Энергонезависимая память 11AA010T-I/TT

EEPROM , AEC-Q100, 1 Кбит, 128 x 8бит, Serial UNI/O, 100 кГц, SOT-23, 3 вывод(-ов)

The 11AA010T-I/TT is a 1kB through 16kB serial Electrically Erasable Programmable Read-Only Memory (EEPROM) organized in blocks of x8-bit memory and support the patented single I/O UNI/O® serial bus. By using Manchester encoding techniques, the clock and data are combined into a single, serial bit stream (SCIO), where the clock signal is extracted by the receiver to correctly decode the timing and value of each bit. Low-voltage design permits operation down to 1.8V, with standby and active currents of only 1µA and 1mA respectively.

• Low-power CMOS technology
• Schmitt trigger inputs for noise suppression
• Output slope control to eliminate ground bounce
• Self-timed write cycle
• Page-write buffer for up to 16 bytes
• STATUS Register for added control
• Write enable latch bit
• Write-in-progress bit
• Block write protection - Protect none, 1
• 4, 1

• 2 or all of array
• Built-in write protection
• Power-on
• off data protection circuitry
• Write enable latch
• High reliability
• Endurance - 1000000 erase
• write cycles
• Data retention - >200 years
• ESD protection - >4000V

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Авто, Промышленное, Связь и Сеть, Потребительская Электроника