Драйверы FET-IGBT MIC4123YME

Драйвер низкой стороны , инвертирующий, питание 4.5В-20В, 3А, 59нс, SOIC-8

The MIC4123YME is a highly reliable 3A-peak low-side MOSFET Driver with Bipolar/CMOS/DMOS process and dual inverting configuration. The MIC4123 driver is capable of giving reliable service in more demanding electrical environments than its predecessors. It will not latch under any conditions within their power and voltage ratings. It can survive up to 5V of noise spiking, of either polarity, on the ground pin. It can accept without either damage or logic upset up to half an amp of reverse current (either polarity) forced back into its outputs. The MIC4123 series driver is easier to use, more flexible in operation and more forgiving than other CMOS or bipolar drivers currently available. Its BiCMOS/DMOS construction dissipates minimum power and provides rail-to-rail voltage swings. Primarily intended for driving power MOSFETs, the MIC4123 driver is suitable for driving other loads which require low-impedance, high peak currents and fast switching times.

• Latch-up protected to >200mA reverse current
• Logic input will withstand negative swing up to 5V
• Drives 1800pF capacitance in 25ns
• Short <50ns typical delay time
• Delay times consistent with in supply voltage change
• Matched rise and fall times
• TTL logic input independent of supply voltage
• Low equivalent 6pF input capacitance
• Low supply current
• Low 2.3R typical output impedance

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