Драйверы FET-IGBT ПЛИС/драйвер МОП-транзистора L6387ED

The L6387ED is a simple and compact high voltage Gate Driver manufactured with the BCD™ offline technology and able to drive a half-bridge of power MOS or IGBT device. The high-side (floating) section is enabled to work with voltage rail up to 600V. Both device outputs can independently sink and source 650 and 400mA respectively and cannot be simultaneously driven high thanks to an integrated interlocking function. The L6387E device provides two input pins and two output pins and guarantees the outputs toggle in phase with inputs. The logic inputs are CMOS/TTL compatible to ease the interfacing with controlling devices. The L6387E features the UVLO protection on the VCC supply voltage and integrates the bootstrap diode, allowing a more compact and reliable solution.

• CMOS
• TTL Schmitt-trigger inputs with hysteresis and pull-down
• Internal bootstrap diode structure
• Outputs in phase with inputs
• Interlocking function
• dV
• dt immunity of ±50V
• ns in full temperature range
• 50
• 30ns Rise

• fall with 1nF load switching time

Области применения

Потребительская Электроника, ОВКВ, Привод Двигателя и Управление, Промышленное, Освещение, Автоматизация Зданий, Управление Питанием