Драйверы FET-IGBT L6385ED

ПЛИС/драйвер МОП-транзистора , высокой стороны и низкой стороны, питание -0.3В до 17В, 650мА, 105нс

The L6385ED is a simple and compact high voltage Gate Driver manufactured with the BCD™ offline technology and able to drive a half-bridge of power MOSFET or IGBT device. The high-side (floating) section is able to work with voltage rail up to 600V. Both device outputs can independently sink and source 650 and 400mA respectively and can be simultaneously driven high. The L6385E device provides two input pins and two output pins and guarantees the outputs toggle in phase with inputs. The logic inputs are CMOS/TTL compatible to ease the interfacing with controlling devices. The bootstrap diode is integrated inside the device, allowing a more compact and reliable solution. The L6385E features the UVLO protection on both lower and upper driving sections (VCC and Vboot), ensuring greater protection against voltage drops on the supply lines.

• CMOS
• TTL Schmitt-trigger inputs with hysteresis and pull-down
• Under-voltage lockout on lower and upper driving section
• Internal bootstrap diode structure
• Outputs in phase with inputs
• dV
• dt immunity of ±50V
• ns in full temperature range
• 50
• 30ns Rise

• fall with 1nF load switching time

Области применения

Потребительская Электроника, ОВКВ, Привод Двигателя и Управление, Промышленное, Освещение, Автоматизация Зданий, Управление Питанием