Драйверы FET-IGBT IRS2108SPBF

ИС МОП-транзистора , полумостовой, 10В-20В, 600мА, 200нс, SOIC-8

The IRS2108SPBF is a high voltage high speed power MOSFET and IGBT Half-bridge Driver with dependent high- and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.

• Floating channel designed for bootstrap operation
• Tolerant to negative transient voltage (dV
• dt immune)
• Under-voltage lockout for both channels
• 3.3, 5 and 15V Input logic compatible
• Cross-conduction prevention logic
• Matched propagation delay for both channels
• High-side output in phase with HIN input
• Low-side output out of phase with input
• Logic and power ground ±5V offset

• Lower di
• dt gate driver for better noise immunity

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