Драйверы FET-IGBT - [SOIC-16-3.9]; Nнижн: 1; Nверхн: 1; Uoffset: 600 В; Iout+: 2 А; Iout-: 2 А; Примечание: High voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. High and Low Side Driver.; Траб: -40...125 °C