Драйверы FET-IGBT - [SOIC-8-3.9]; Nнижн: 1; Nверхн: 1; Uoffset: 600 В; Iout+: 200 мА; Iout-: 350 мА; Примечание: High voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Half-Bridge Driver.; Траб: -40...125 °C