Драйверы FET-IGBT IR2125PBF

Микросхема питания , высокой стороны и низкой стороны, питание 0В-18В, 3.3А, 200нс, DIP-8

The IR2125PBF is a 1-channel high voltage high speed power MOSFET and IGBT Driver with over-current limiting protection circuitry. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs and down to 2.5V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The protection circuitry detects over-current in the driven power transistor and limits the gate drive voltage. Cycle-by-cycle shutdown is programmed by an external capacitor which directly controls the time interval between detection of the over-current limiting conditions and latched shutdown. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high or low-side configuration which operates up to 500V.

• Tolerant to negative transient voltage DV
• DT Immune
• Under-voltage lockout
• Current detection and limiting loop to limit driven power transistor current
• Error lead indicates fault conditions and programs shutdown time
• Output in phase with input

Области применения

Промышленное, Потребительская Электроника