Драйверы FET-IGBT IR2111PBF..

Двойной драйвер , высокой стороны и низкой стороны, питание 10В-20В, 500мА, задержка 150нс, DIP-8

The IR2111PBF is a high voltage high speed power MOSFET and IGBT Driver with dependent high and low-side referenced output channels designed for half-bridge applications. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Internal dead-time is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.

• Tolerant to negative transient voltage DV
• DT Immune
• Under-voltage lockout for both channels
• CMOS Schmitt-triggered inputs with pull-down
• Matched propagation delay for both channels
• Internally set dead-time
• High side output in phase with input

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Промышленное, Потребительская Электроника, Альтернативаня Энергия, Управление Питанием