Драйверы FET-IGBT IR2108SPBF

Двойной драйвер МОП-транзистора , полумостовой, 10В-20В питание, 350мА пиковый выход, SOIC-8

High voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels.

• Floating channel designed for bootstrap operation fully operational to +600V
• Tolerant to negative transient voltage dV
• dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for both channels
• 3.3V, 5V and 15V input logic compatible
• Cross-conduction prevention logic
• Matched propagation delay for both channels
• High side output in phase with HIN input
• Logic and power ground +

• - 5V offset
• Lower di
• dt gate driver for better noise immunity

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