Биполярный транзистор BFG425W,115

Биполярный - РЧ транзистор , NPN, 4.5 В, 25 ГГц, 135 мВт, 25 мА, SOT-343R

The BFG425W,115 is a NPN double polysilicon Wideband Transistor with buried layer for low voltage applications in a plastic, dual-emitter package. It is designed for use with RF front end, analogue and digital cellular telephones, cordless telephones (PHS, DECT), radar detectors, pagers, SATV tuners and high frequency oscillator applications.

• Very high power gain
• Low noise figure
• High transition frequency
• Emitter is thermal lead
• Low feedback capacitance

Области применения

Промышленное, Радиочастотная Связь, Связь и Сеть, Управление Питанием Market demand for this product has caused an extension in lead times, delivery dates may fluctuate