Биполярные транзисторы с изолированным затвором (IGBT) IHW30N110R3FKSA1

БТИЗ транзистор , 60 А, 1.55 В, 333 Вт, 1.1 кВ, TO-247, 3 вывод(-ов)

The IHW30N110R3 is a Reverse Conducting IGBT with monolithic body diode. The 3rd generation of reverse conducting IGBT has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behaviour allows better thermal performance and EMI behaviour resulting in lower system costs. It features powerful monolithic body diode with low forward voltage designed for soft commutation only. It is suitable for rice cookers and other soft switching applications.

• Excellent performance
• Best-in-class conduction properties in VCE(sat) and Vf
• Lowest switching losses, highest efficiency
• Soft current turn-OFF waveforms for low EMI
• Lowest power dissipation
• Better thermal management
• Surge current capability
• Lower EMI filtering requirements
• Excellent quality
• Highest reliability against peak current

• Very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Easy parallel switching capability due to positive temperature coefficient in VCEsat
• Green product
• Halogen-free

Области применения

Потребительская Электроника, Альтернативаня Энергия, Управление Питанием