Биполярные транзисторы с изолированным затвором (IGBT) IGW50N60TFKSA1

БТИЗ транзистор , 50 А, 2 В, 333 Вт, 600 В, TO-247, 3 вывод(-ов)

The IGW50N60T is a Low Loss IGBT in TrenchStop® and field-stop technology. The TrenchStop® IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of TrenchStop®-cell and field-stop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-ON losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

• Lowest Vce (sat) drop for lower conduction losses
• Low switching losses
• Easy parallel switching capability due to positive temperature coefficient in Vce (sat)
• Very soft, fast recovery anti-parallel emitter controlled diode
• High ruggedness, temperature stable behaviour
• Low EMI emissions
• Low gate charge
• Very tight parameter distribution
• Highest efficiency - Low conduction and switching losses
• High device reliability

• 5µs Short-circuit withstand time
• Green product
• Halogen-free

Области применения

Управление Питанием, Альтернативаня Энергия, Потребительская Электроника, ОВКВ, Техническое Обслуживание и Ремонт