Биполярные транзисторы с изолированным затвором (IGBT) IGW25N120H3FKSA1

БТИЗ транзистор , 50 А, 2.05 В, 326 Вт, 1.2 кВ, TO-247, 3 вывод(-ов)

The IGW25N120H3 is a High Speed IGBT in Trench and field-stop technology recommended in combination with SiC diode IDH15S120. The high speed device is used to reduce the size of the active components (25 to 70kHz). The high speed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-OFF switching behaviour, leading to low turn-OFF losses. Furthermore, up to 15% efficiency improvement can be achieved by implementing this technology in your design.

• Designed specifically to replace planar MOSFETs in applications switching @ frequencies below 70kHz
• Low switching losses for high efficiency
• Fast switching behaviour with low EMI emissions
• Optimized diode for target applications, meaning further improvement in switching losses
• Low gate resistor selection possible (down to 5R) whilst maintaining excellent switching behaviour
• Short-circuit capability
• Excellent performance
• Low switching and conduction losses
• Very good EMI behaviour
• Small gate resistor for reduced delay time and voltage overshoot

• Best-in-class IGBT efficiency and EMI behaviour
• Packaged with and without freewheeling diode for increased design freedom
• Green product
• Halogen-free

Области применения

Альтернативаня Энергия, Управление Питанием