Биполярные транзисторы с изолированным затвором (IGBT) IGP50N60TXKSA1

БТИЗ транзистор , 50 А, 2 В, 333 Вт, 600 В, TO-220, 3 вывод(-ов)

The IGP50N60T is a 600V Discrete IGBT Single Transistor without anti-parallel diode. TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

• Lowest Vce (sat) drop for lower conduction losses
• Low switching losses
• Easy parallel switching capability due to positive temperature coefficient in Vce (sat)
• Very soft, fast recovery anti-parallel emitter controlled diode
• High ruggedness, temperature stable behavior
• Low EMI emissions
• Low gate charge
• Very tight parameter distribution
• Comprehensive portfolio in 600V and 1200V for flexibility of design
• High device reliability

• ±20V Gate to emitter voltage (VGE)
• 0.45K
• W IGBT thermal resistance, junction to case
• 40K
• W IGBT thermal resistance, junction - ambient

Области применения

Управление Питанием, Альтернативаня Энергия, Потребительская Электроника, ОВКВ, Промышленное