Биполярные транзисторы с изолированным затвором (IGBT) HGTG30N60C3D

БТИЗ транзистор , 63 А, 1.8 В, 208 Вт, 600 В, TO-247, 3 вывод(-ов)

The HGTG30N60C3D is a N-channel IGBT with anti-parallel hyperfast diode. The UFS series MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor. The much lower ON-state voltage drop varies only moderately between 25 and 150°C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053. It is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.

• Short-circuit rating
• 230ns Fall time @ TJ = 150°C
• 208W Total power dissipation @ TC = 25°C

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