Биполярные транзисторы с изолированным затвором (IGBT) HGTG12N60C3D

БТИЗ транзистор , 24 А, 1.8 В, 104 Вт, 600 В, TO-247, 3 вывод(-ов)

The HGTG12N60C3D is a N-channel IGBT with anti-parallel hyperfast diode. The UFS series MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor. The much lower ON-state voltage drop varies only moderately 25 and 150°C. The IBGT used is the development type TA49123. The diode in anti-parallel with the IGBT is the development type TA49061. It is ideal for high voltage switching applications operating at moderate frequencies where low conduction losses are essential.

• Short-circuit rating
• 210ns Fall time @ TJ = 150°C
• 104W Total power dissipation @ TC = 25°C

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