Биполярные транзисторы с изолированным затвором (IGBT) HGTD1N120BNS9A

БТИЗ транзистор , 5.3 А, 2.5 В, 60 Вт, 1.2 кВ, TO-252AA, 3 вывод(-ов)

The HGTD1N120BNS9A is a N-channel Non-punch Through (NPT) IGBT ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS and solar inverter. It is new member of the MOS gated high voltage switching IGBT family. It combines the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor.

• Short-circuit rating
• Avalanche rated
• 2.5V @ IC = 1A Low saturation voltage
• 258ns Fall time @ TJ = 150°C
• 298W Total power dissipation @ TC = 25°C

Области применения

Управление Питанием, Привод Двигателя и Управление