Биполярные транзисторы с изолированным затвором (IGBT) FGY75N60SMD

БТИЗ транзистор , 150 А, 1.9 В, 750 Вт, 600 В, Power 247, 3 вывод(-ов)

The FGY75N60SMD is a 1000V Field Stop IGBT with high current capability. This new IGBT is suitable for soft switching applications such as induction cookers and inverterized microwave ovens. FS IGBT provides lower VCE (sat) during on-state and lower switching losses during the turn-off instant. However, since it doesn't include an intrinsic body diode in common with all other types of IGBTs, it is generally packaged together with an additional Fast Recovery Diode (FRD) for most switching applications. This product is general usage and suitable for many different applications.

• Low saturation voltage
• High input impedance
• High speed switching
• Built-in fast recovery diode

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Управление Питанием, Альтернативаня Энергия